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This work involves the design of a K-band switched-line phase shifter, novel shunt capacitive RF-MEMS switches and coplanar waveguide lines. The RF-MEMS capacitive switch is actuated by electrostatic force with a very low pull-in voltage of 3.04V and is placed on a highly-resistive silicon substrate. The 3-bit MEMS phase shifter is assembled by three single-bit units (namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures.
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A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
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